IndiumV3, Main, Repository, bibRecord, 001967

Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)

Identifieur interne : 001967 ( Main/Repository ); précédent : 001966; suivant : 001968

Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)

Auteurs : RBID : Pascal:12-0284067

Descripteurs français

Pascal (Inist)
- Structure surface, Croissance film, Pulvérisation réactive, Pulvérisation cathodique, Magnétron, Structure cristalline, Bande interdite, Nitrure d'indium, Semiconducteur, Zircone stabilisée, In N, InN, Composé minéral.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Cathode sputtering, Crystal structure, Energy gap, Film growth, Indium nitride, Inorganic compounds, Magnetrons, Reactive sputtering, Semiconductor materials, Stabilized zirconia, Surface structure.

Abstract

InN films with the wurtzite structure have been grown directly on YSZ (100) substrate by the RF-magnetron sputtering technique. Strongly (002) oriented films with smooth surfaces (0.7-2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)</title>
<author><name sortKey="Zoita, N C" uniqKey="Zoita N">N. C. Zoita</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute of Research and Developmentfor Optoelectronics, Atomistilor 409, PO Box MG-5</s1>
<s2>Magurele, Ilfov, 077125</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>Magurele, Ilfov, 077125</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Grigorescu, C E A" uniqKey="Grigorescu C">C. E. A. Grigorescu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Institute of Research and Developmentfor Optoelectronics, Atomistilor 409, PO Box MG-5</s1>
<s2>Magurele, Ilfov, 077125</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>Magurele, Ilfov, 077125</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0284067</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0284067 INIST</idno>
<idno type="RBID">Pascal:12-0284067</idno>
<idno type="wicri:Area/Main/Corpus">001B66</idno>
<idno type="wicri:Area/Main/Repository">001967</idno>
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<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathode sputtering</term>
<term>Crystal structure</term>
<term>Energy gap</term>
<term>Film growth</term>
<term>Indium nitride</term>
<term>Inorganic compounds</term>
<term>Magnetrons</term>
<term>Reactive sputtering</term>
<term>Semiconductor materials</term>
<term>Stabilized zirconia</term>
<term>Surface structure</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Structure surface</term>
<term>Croissance film</term>
<term>Pulvérisation réactive</term>
<term>Pulvérisation cathodique</term>
<term>Magnétron</term>
<term>Structure cristalline</term>
<term>Bande interdite</term>
<term>Nitrure d'indium</term>
<term>Semiconducteur</term>
<term>Zircone stabilisée</term>
<term>In N</term>
<term>InN</term>
<term>Composé minéral</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">InN films with the wurtzite structure have been grown directly on YSZ (100) substrate by the RF-magnetron sputtering technique. Strongly (002) oriented films with smooth surfaces (0.7-2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0>
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<fA03 i2="1"><s0>Appl. surf. sci.</s0>
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</fA05>
<fA06><s2>16</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)</s1>
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<fA11 i1="01" i2="1"><s1>ZOITA (N. C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GRIGORESCU (C. E. A.)</s1>
</fA11>
<fA14 i1="01"><s1>National Institute of Research and Developmentfor Optoelectronics, Atomistilor 409, PO Box MG-5</s1>
<s2>Magurele, Ilfov, 077125</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>6046-6051</s1>
</fA20>
<fA21><s1>2012</s1>
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<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000506908420210</s5>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>38 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0284067</s0>
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<fA60><s1>P</s1>
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<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>InN films with the wurtzite structure have been grown directly on YSZ (100) substrate by the RF-magnetron sputtering technique. Strongly (002) oriented films with smooth surfaces (0.7-2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Structure surface</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Surface structure</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance film</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Film growth</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Pulvérisation réactive</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Reactive sputtering</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Cathode sputtering</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Magnétron</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Magnetrons</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Bande interdite</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Energy gap</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Zircone stabilisée</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Stabilized zirconia</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Zircona estabilizada</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>In N</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>62</s5>
</fC03>
<fN21><s1>212</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)

Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri